Infineon Technologies has developed the world’s first 300 mm gallium nitride (GaN) wafer technology, marking a significant milestone in the power semiconductor industry. By leveraging its existing 300 mm silicon manufacturing infrastructure, Infineon has created a scalable, high-volume production process that enhances cost-efficiency.The 300 mm GaN wafers offer 2.3 times more chips per wafer compared to 200 mm wafers, improving production efficiency and device performance. This innovation positions Infineon as […]